DC and RF characteristics of FinFET over a wide temperature range
نویسندگان
چکیده
In recent years, FinFET transistors have received much interest thanks to the better immunity to short-cannel effects [1]. DC characteristics of FinFETs at high temperature were recently reported in [2]. RF characteristics of Bulk Si MOSFETs measured at low temperature (77K) have been presented in a few papers [3]-[4]. To the knowledge of the authors, the DC and RF characteristics, over a wide temperature range, of advanced MOSFETs such as FinFETs have not been reported in the literature yet. This is the aim of the present paper.
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